Public domain
PRO Imagery Submittal - Radiation Harden GaN
From the collection of NASA Image and Video Library. Free to download, adapt and use — no permission needed.
About this work
jsc2025e015687 (3/6/2025) --- Alex Katorkas (left) and Haochen Zhao (right) work in front of a prototype as part of the High Performance Radiation Hardened GaN High Electron Mobility Transistors for Space Applications (Radiation Harden GaN) investigation which studies how radiation affects a type of transistor used in the semiconductor industry. Researchers measure the performance of the devices before, during, and after flight to determine whether performance degrades.
NASA Image and Video Library’s own descriptionCredit linePRO Imagery Submittal - Radiation Harden GaN. NASA/JSC, 2025-01-10. Public domain. ID: jsc2025e015687.
